Distributed PA Chip Delivers up to +25 dBm Saturated Output Power
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Hittite Microwave Corporation has introduced a new GaAs pHEMT MMIC Power Amplifier which is ideal for test instrumentation, microwave radio, and military and space applications from DC to 40 GHz.
The HMC930 is a GaAs pHEMT MMIC Distributed Power Amplifier die which operates between DC and 40 GHz, and delivers up to 13 dB of gain, +33.5 dBm output IP3 and +22 dBm of output power at 1 dB gain compression. The input and output return losses of the HMC930 are better than 12 dB and 16 dB respectively, across the band.
The gain flatness is excellent at ±0.3 dB from 12 to 32 GHz, while a slightly positive gain slope in this same band makes the HMC930 ideal for microwave radio, and military EW and ECM applications. This compact power amplifier die occupies less than 4.25 mm2, consumes only 175 mA from a +10 V supply, and is specified for operation over the -55 to +85 oC temperature range.
Samples are available from stock and can be ordered via the company’s e-commerce site or via direct purchase order. Released data sheets are available on-line at www.hittite.com
Hittite Microwave Corporation
http://www.hittite.com
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晚上看到了RSS推送的这条新闻,DC-40GHz行波放大器(分布放大器)。想起了,我上研究生设计的第一个电路,就是一个DC-18GHz的TWA。当时真是初生牛犊不怕虎,狠狠地扎进去研究了很长时间;尽管最后我的设计开了玩笑,但那段经历还是非常刻骨铭心的。
